| PART |
Description |
Maker |
| 2N2324 |
SCR, V(DRM) = 100 V TO 199.9 V
|
New Jersey Semi-Conductor Products, Inc.
|
| N275CH04 N275CH04LOO N275CH04KOO N275CH04HOO N275C |
769.3 A, 400 V, SCR, TO-200AB
5565.65 A, 400 V, SCR
1640.65 A, 600 V, SCR, TO-200AC
36.11 A, 1200 V, SCR, TO-48
2614.05 A, 1400 V, SCR
3799.4 A, 3400 V, SCR
2610.91 A, 2600 V, SCR
133.45 A, 800 V, SCR
4474.5 A, 4200 V, SCR
3925 A, 4500 V, SCR
3925 A, 4400 V, SCR
2692.55 A, 1600 V, SCR
70.65 A, 200 V, SCR, TO-65
3595.3 A, 400 V, SCR
3595.3 A, 200 V, SCR
4003.5 A, 2800 V, SCR
1428.7 A, 1800 V, SCR, TO-200AC
1428.7 A, 1600 V, SCR, TO-200AC
612.3 A, 1600 V, SCR
32.97 A, 1000 V, SCR, TO-48
98.91 A, 1000 V, SCR, TO-65
|
Westcode Semiconductors, Ltd.
WESTCODE SEMICONDUCTORS LTD
|
| NTE5548 NTE5541 NTE5545 |
Silicon controlled rectifier (SCR). Repetitive peak off-state & reverse voltage Vdrm,Vrrm = 400V. RMS on-state current 35A.
Silicon Controlled Rectifier (SCR) 35 Amp
|
NTE[NTE Electronics]
|
| BD828-10 BD826-6 BD826-16 BD830-10 |
SCR Thyristor; SCR Type:Sensitive Gate; Peak Repetitive Off-State Voltage, Vdrm:400V; On-State RMS Current, IT(rms):10A; Peak Non Repetitive Surge Current, Itsm:100A; Gate Trigger Current Max, Igt:200uA
TRANSISTOR | BJT | PNP | 45V V(BR)CEO | 1.5A I(C) | TO-202
TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 1.5A I(C) | TO-202
SCR Thyristor; SCR Type:Standard Gate; Peak Repetitive Off-State Voltage, Vdrm:400V; On-State RMS Current, IT(rms):25A; Peak Non Repetitive Surge Current, Itsm:350A; Gate Trigger Current Max, Igt:35uA 晶体管|晶体管|进步党| 60V的五（巴西）总裁| 1.5AI（丙）|02
|
Analog Devices, Inc.
|
| D390CH18E3L2 D390CH18E3L3 D390CH18E3L4 D390CH18E3L |
2426 A, 1800 V, SCR
1125 A, 1200 V, SCR, TO-200AB
1950 A, 800 V, SCR, TO-200AC
5087 A, 1600 V, SCR
5087 A, 1800 V, SCR
2749 A, 1800 V, SCR
2749 A, 800 V, SCR
2110 A, 3000 V, SCR
2749 A, 600 V, SCR
1895 A, 1000 V, SCR, TO-200AC
2268 A, 1200 V, SCR
5260 A, 1200 V, SCR
1690 A, 800 V, SCR, TO-200AC
2749 A, 1600 V, SCR
5260 A, 1600 V, SCR
2749 A, 1000 V, SCR
1765 A, 1200 V, SCR, TO-200AC
1765 A, 1600 V, SCR, TO-200AC
2749 A, 1200 V, SCR
2749 A, 400 V, SCR
1030 A, 800 V, SCR, TO-200AB
1715 A, 600 V, SCR, TO-200AC
3140 A, 600 V, SCR
2600 A, 1200 V, SCR
|
Westcode Semiconductors, Ltd.
WESTCODE SEMICONDUCTORS LTD
|
| 2P1M-YB 2P6M-YB 2P4M-YB 2P2MYC 2P2M-YB 2P2M-CY 2P0 |
4 A, 100 V, SCR PLASTIC PACKAGE-3
4 A, 600 V, SCR PLASTIC PACKAGE-3
4 A, 400 V, SCR PLASTIC PACKAGE-3
4 A, 200 V, SCR
4 A, 50 V, SCR
|
|
| TGF148-600B TGF148-1200B TGF148-800B TGF148-1000B |
63 A, 600 V, SCR, TO-65
63 A, 1200 V, SCR, TO-65
63 A, 800 V, SCR, TO-65
63 A, 1000 V, SCR, TO-65
|
ST Microelectronics
|
| VSKT25016PBF VSKT17016PBF |
SCR/SCR and SCR/Diode (MAGN-A-PAKTM Power Modules), 170/250 A
|
Vishay Siliconix
|
| MP03XXX190-12 MP03XXX190 MP03XXX190-08 MP03XXX190- |
Phase Control Dual SCR, SCR/Diode Modules 相位控制双可控硅，SCR /二极管模
|
Dynex Semiconductor, Ltd.
DYNEX[Dynex Semiconductor]
|
| R216CH12 R325CH02 R800CH04 |
1125 A, 1200 V, SCR
2398 A, 200 V, SCR
5260 A, 400 V, SCR
|
Westcode Semiconductors, Ltd.
WESTCODE SEMICONDUCTORS LTD
|
| S2800A-BD S2800M-BC |
10 A, 100 V, SCR, TO-220AB
10 A, 600 V, SCR, TO-220AB
|
MOTOROLA INC
|
|
